A low phase noise VCO in eWLB package

Author

Starzer, Florian ; Fischer, Anath ; Knapp, Herbert ; Lachner, Rudolf ; Wojnowski, M. ; Maurer, Linus ; Stelzer, Andreas

Author_Institution

Christian Doppler Lab. for Integrated Radar Sensors, Linz, Austria

fYear

2012

fDate

5-7 Dec. 2012

Firstpage

326

Lastpage

329

Abstract

A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of -92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.

Keywords

Ge-Si alloys; ball grid arrays; carbon; inductors; mixers (circuits); phase noise; voltage-controlled oscillators; wafer level packaging; D-Cm; PN value; SiGe:C; chip-package co-design; down-converter mixer; eWLB package; embedded wafer level ball grid array package; frequency 200 GHz; frequency-adjustable; low phase noise VCO; package defined inductor; phase noise value; radar application; single silicon device; voltage controlled oscillator; Bandwidth; Electronics packaging; Inductors; Resonant frequency; Silicon; Voltage-controlled oscillators; Wafer level packaging; inductors; integrated circuit packaging; microwave oscillators; voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th

Conference_Location

Singapore

Print_ISBN

978-1-4673-4553-8

Electronic_ISBN

978-1-4673-4551-4

Type

conf

DOI

10.1109/EPTC.2012.6507101

Filename

6507101