DocumentCode
2033954
Title
ESD simulation on GGNMOS for 40V BCD
Author
Herlambang, Aloysius Priartanto ; Sheu, Gene ; Yang, Shao-Ming ; Sulistyanto, Priyono Tri ; Tu, Shang-Hui ; Jan, Jin-Shyong ; Jou, Yeh-Ning ; Hung, Chia-Wei
Author_Institution
Comput. Sci. & Inf. Eng. Dept., Asia Univ., Taichung, Taiwan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
80
Lastpage
83
Abstract
In this paper, TCAD was used to simulate GGNMOS (Grounded-Gate NMOS) as an ESD protection device for 40V BCD. The physic models and the calibration method are discussed in order to get better accuracy on the result. The effects of device parameter on the ESD robustness are investigated by device simulation in order to achieve the desired ESD design window. The simulated holding voltage is in agreement with BJT model that already proven has an agreement with silicon result. Finally, the ESD design window for 40V BCD device can be obtained by changing some device parameters.
Keywords
MOSFET; electrostatic discharge; semiconductor device reliability; technology CAD (electronics); BCD; BJT model; ESD protection; TCAD; device simulation; electrostatic discharge; grounded-gate NMOS; voltage 40 V; BCD; ESD; GGNMOS; Reliability; TLP;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5685874
Filename
5685874
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