• DocumentCode
    2033963
  • Title

    A new technique for extraction of bias-dependent drain resistance in HEMTs

  • Author

    Kokolov, A.A.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    A new technique for extracting bias-dependent drain resistance Rd in microwave FETs is proposed. Solving a set of equations for the new FET internal equivalent circuit, the analytical formula for bias-dependent Rd value is derived. The dependence of Rd on bias voltages is obtained for 0.15 um GaN HEMT on SiC substrate. The use of bias-dependent Rd in linear and nonlinear FET models leads to improving the modeling accuracy of the FET S-parameter, IV-characteristics, and output power.
  • Keywords
    III-V semiconductors; S-parameters; electric resistance; equivalent circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; GaN; GaN HEMT; I-V characteristics; S-parameter; SiC; SiC substrate; bias voltages; bias-dependent drain resistance; extraction technique; internal equivalent circuit; microwave FETs; output power; size 0.15 mum; Gallium nitride; HEMTs; MODFETs; Microwave FET integrated circuits; Microwave circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2033963