Title :
A new technique for extraction of bias-dependent drain resistance in HEMTs
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
A new technique for extracting bias-dependent drain resistance Rd in microwave FETs is proposed. Solving a set of equations for the new FET internal equivalent circuit, the analytical formula for bias-dependent Rd value is derived. The dependence of Rd on bias voltages is obtained for 0.15 um GaN HEMT on SiC substrate. The use of bias-dependent Rd in linear and nonlinear FET models leads to improving the modeling accuracy of the FET S-parameter, IV-characteristics, and output power.
Keywords :
III-V semiconductors; S-parameters; electric resistance; equivalent circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; GaN; GaN HEMT; I-V characteristics; S-parameter; SiC; SiC substrate; bias voltages; bias-dependent drain resistance; extraction technique; internal equivalent circuit; microwave FETs; output power; size 0.15 mum; Gallium nitride; HEMTs; MODFETs; Microwave FET integrated circuits; Microwave circuits;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
