An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method

Author

Sihombing, Rudy Octavius ; Sheu, Gene ; Yang, Shao-Ming ; Wasisto, Hutomo Suryo ; Guo, Yu-Feng ; Tu, Shang-Hui ; Chin, Yu-Lung ; Jan, Jin-Shyong ; Lee, Chia-Hao

Author_Institution

Comput. Sci. & Inf. Eng. Dept., Asia Univ., Taichung, Taiwan

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

71

Lastpage

74

Abstract

An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.

Keywords

MOS integrated circuits; power integrated circuits; FPFP length variation; FPFP method; HVI metal line; LDMOS high-voltage level shifter circuit; breakdown voltage; floating polyfield plate method; high-voltage interconnection level shifter; high-voltage p-n junction; mask design layout; voltage 800 V;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5685878

Filename

5685878