Switching characteristic model and biochemical application analysis for electrolyte-oxide-semiconductor structure diodes

We present a model and applications analysis of the switching characteristic of electrolyte-oxide-semiconductor (EOS) structure diodes. The EOS structure consists of a heavily-doped silicon layer, an SiO₂ layer, and an electrolyte-solution layer, and exhibits diode characteristics when a sweeping voltage is applied. A conduction model of the switching characteristic of EOS diodes is suggested, and implements aspects of ion diffusion theory. The application potential of the EOS structure is also analyzed in accordance with the suggested model. EOS structures provide a simple means to fabricate half-fluidic diodes without photolithography and other sophisticated structure-fabrication processes; hence, they can be utilized for many biochemical applications, such as ion detection and current control in microfluidic devices.