A new current sensor based on MagFET highly immune to EMI

Author

Aiello, O. ; Fiori, F.

Author_Institution

EMC Competence Center, Ist. Superiore Mario Boella, Turin, Italy

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

784

Lastpage

787

Abstract

This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed.

Keywords

CMOS integrated circuits; Hall effect devices; electric current measurement; electric sensing devices; power MOSFET; radiofrequency interference; CMOS integrated current sensors; EMI; Hall effect; MOS transistors; MagFET-highly immune sensor; conventional-wired current sensor; electromagnetic interference susceptibility; integrated solution; power transistor current monitoring; radio frequency interference susceptibility; Cables; Electromagnetic interference; Hall effect; MOSFETs; Magnetic sensors; Monitoring; Power transistors; Printed circuits; Radiofrequency interference; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on

Conference_Location

Torino

Print_ISBN

978-1-4244-3385-8

Electronic_ISBN

978-1-4244-3386-5

Type

conf

DOI

10.1109/ICEAA.2009.5297310

Filename

5297310