Title :
GaN-on-Si hotspot thermal management using direct-die-attached microchannel heat sink
Author :
Yong Jiun Lee ; Boon Long Lau ; Yoke Choy Leong ; Kok Fah Choo ; Xiaowu Zhang ; Poh Keong Chan
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
GaN-on-Si device posts new challenge to thermal management with its highly concentrated heat flux dissipation from HEMT. In order to characterize GaN-on-Si hotspot and to develop an effective cooling solution, a customized thermal test chip is built with highly doped resistors to produce tiny (150 × 350 μm2) hotspots. Direct-die-attached copper microchannel heat sink is used instead of the conventional slap on heat sink to significantly improve the heat removal rate from the device. By using Infra-red (IR) thermography, the current experimental work demonstrated the cooling capability of microchannel heat sink up to 11.9 kW/cm2 hotspot heat flux with a maximum hotspot temperature of 175 °C.
Keywords :
heat sinks; high electron mobility transistors; thermal management (packaging); HEMT; cooling solution; customized thermal test chip; direct die attached copper microchannel heat sink; heat flux dissipation; heat removal rate; highly doped resistors; hotspot heat flux; hotspot thermal management; infrared thermography; maximum hotspot temperature; Heat sinks; Microchannel; Resistance heating; Resistors; Temperature measurement; Thermal resistance;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
DOI :
10.1109/EPTC.2012.6507148
