DocumentCode
2035561
Title
The challenge of integrating magnetic nanostructures into functional 3-D devices
Author
Sautner, J. ; Fields, J. ; Vavassori, P. ; Unguris, J. ; Metlushko, V.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
958
Lastpage
960
Abstract
Most magnetic nanostructures today are ultrathin or nanostructured films and multilayers. The key challenge for the future will be a suitable technology to integrate and to contact nanostructures in a reliable manner. Real devices are truly 3-dimensional structures, particularly where the roughness and shape of the contact lines influences a performance to such an extent that they modify the mechanism of operation. The topography must absolutely be taken into consideration during the design phase. This move towards non-flat device structures requires advanced fabrication, testing, and modeling in realistic 3-D geometries.
Keywords
MRAM devices; magnetic multilayers; magnetic thin films; nanostructured materials; 3-dimensional structures; MRAM devices; functional 3-D devices; integrating magnetic nanostructures; multilayers; nanostructured films; nonflat device structures; ultrathin films; Fabrication; Geometry; Magnetic devices; Magnetic films; Magnetic multilayers; Nanostructures; Shape; Solid modeling; Surfaces; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on
Conference_Location
Torino
Print_ISBN
978-1-4244-3385-8
Electronic_ISBN
978-1-4244-3386-5
Type
conf
DOI
10.1109/ICEAA.2009.5297336
Filename
5297336
Link To Document