• DocumentCode
    2035678
  • Title

    Design of CMOS APS and floating gate dosimeters

  • Author

    Vazquez, Ignacio Martinez ; Faigon, Adrian

  • Author_Institution
    Device Physics Laboratory-Microelectronics, Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires
  • fYear
    2015
  • fDate
    30-31 July 2015
  • Firstpage
    7
  • Lastpage
    10
  • Abstract
    We design and optimize two non-standard dosimeter circuits: an Active Pixel Sensor and a Floating Gate Sensor, for fabrication on a standard CMOS process. An Active Pixel Sensor is found suitable for dose rates down to 3.6 mGy s−1, with a sensitivity of 7.1 V Gy−1. A Floating Gate dosimeter is optimized for a sensitivity of 46mV Gy−1, with a noise-equivalent dose of 0.2mGy.
  • Keywords
    Active pixel sensors; Artificial intelligence; CMOS integrated circuits; Capacitance; Logic gates; Nonvolatile memory; Sensitivity; Active pixel sensors; CMOS integrated circuits; dosimetry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro-Nanoelectronics, Technology and Applications (EAMTA), 2015 Argentine School of
  • Conference_Location
    Villa Maria, Argentina
  • Print_ISBN
    978-1-4799-8017-8
  • Type

    conf

  • DOI
    10.1109/EAMTA.2015.7237370
  • Filename
    7237370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2035678