Title :
Design of CMOS APS and floating gate dosimeters
Author :
Vazquez, Ignacio Martinez ; Faigon, Adrian
Author_Institution :
Device Physics Laboratory-Microelectronics, Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires
Abstract :
We design and optimize two non-standard dosimeter circuits: an Active Pixel Sensor and a Floating Gate Sensor, for fabrication on a standard CMOS process. An Active Pixel Sensor is found suitable for dose rates down to 3.6 mGy s−1, with a sensitivity of 7.1 V Gy−1. A Floating Gate dosimeter is optimized for a sensitivity of 46mV Gy−1, with a noise-equivalent dose of 0.2mGy.
Keywords :
Active pixel sensors; Artificial intelligence; CMOS integrated circuits; Capacitance; Logic gates; Nonvolatile memory; Sensitivity; Active pixel sensors; CMOS integrated circuits; dosimetry;
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications (EAMTA), 2015 Argentine School of
Conference_Location :
Villa Maria, Argentina
Print_ISBN :
978-1-4799-8017-8
DOI :
10.1109/EAMTA.2015.7237370
