Effect of surface pad finish on fracture mode of flip chip package under electro-migration

Author

Lee, J.H. ; Kim, Jin Young ; Hong, S.J. ; Moon, J.T.

Author_Institution

MK Electron Co., Ltd., Yongin, South Korea

fYear

2012

fDate

5-7 Dec. 2012

Firstpage

681

Lastpage

684

Abstract

Electro-migration effect in Cu-OSP and ENIG pad finish in flip chip package were investigate. A temperature of 398 K with a current density of 1.5×10⁴A/cm2 was applied. For EM phenomena were investigated using SAC solder composition of different pad finish. The diameter of the bumps was about 100 mm. Through this research, the main fracture types can be represented by two types : 1) failure caused by voids in the solder; 2) failure caused by Cu wiring. And the movement of Sn, Ag and Cu atoms in solder bump were able to confirm.

Keywords

copper alloys; electromigration; failure analysis; flip-chip devices; gold alloys; integrated circuit packaging; integrated circuit reliability; nickel alloys; silver alloys; solders; tin alloys; ENIG pad finish; Ni-Au; OSP; SAC solder composition; Sn-Ag-Cu; copper wiring; electromigration effect; flip chip package; fracture mode; solder void; surface pad finish; Compounds; Current density; Flip-chip devices; Intermetallic; Nickel; Tin; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th

Conference_Location

Singapore

Print_ISBN

978-1-4673-4553-8

Electronic_ISBN

978-1-4673-4551-4

Type

conf

DOI

10.1109/EPTC.2012.6507168

Filename

6507168