Title :
Quantized bands model for the determination of the dielectric constant of high-κ layers
Author :
Salomone, L.Sambuco ; Beldarrain, O. ; Campabadal, F. ; Faigon, A.
Author_Institution :
Device Physics - Microelectronics Laboratory, INTECIN, Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Ciudad Autónoma de Buenos Aires, Argentina
Abstract :
A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al2O3 layers with known physical thicknesses by fitting experimental results. A comparison with a continuum band model is presented.
Keywords :
Aluminum oxide; Capacitance-voltage characteristics; Dielectric constant; Electric potential; Logic gates; MOS capacitors; Silicon; Al2O3; High-κ gate dielectrics; MOS devices;
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications (EAMTA), 2015 Argentine School of
Conference_Location :
Villa Maria, Argentina
Print_ISBN :
978-1-4799-8017-8
DOI :
10.1109/EAMTA.2015.7237377
