• DocumentCode
    2035836
  • Title

    Quantized bands model for the determination of the dielectric constant of high-κ layers

  • Author

    Salomone, L.Sambuco ; Beldarrain, O. ; Campabadal, F. ; Faigon, A.

  • Author_Institution
    Device Physics - Microelectronics Laboratory, INTECIN, Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Ciudad Autónoma de Buenos Aires, Argentina
  • fYear
    2015
  • fDate
    30-31 July 2015
  • Firstpage
    43
  • Lastpage
    46
  • Abstract
    A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al2O3 layers with known physical thicknesses by fitting experimental results. A comparison with a continuum band model is presented.
  • Keywords
    Aluminum oxide; Capacitance-voltage characteristics; Dielectric constant; Electric potential; Logic gates; MOS capacitors; Silicon; Al2O3; High-κ gate dielectrics; MOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro-Nanoelectronics, Technology and Applications (EAMTA), 2015 Argentine School of
  • Conference_Location
    Villa Maria, Argentina
  • Print_ISBN
    978-1-4799-8017-8
  • Type

    conf

  • DOI
    10.1109/EAMTA.2015.7237377
  • Filename
    7237377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2035836