Title :
A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications
Author :
Dréan, S. ; Deltimple, N. ; Kerhervé, E. ; Martineau, B. ; Belot, D.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Bordeaux, France
fDate :
Aug. 30 2012-Sept. 2 2012
Abstract :
This work presents a two-stage 65nm CMOS 60 GHz power amplifier composed by a Class E power stage and a Class F driver stage, dedicated to low cost Wireless Personal Area Network (WPAN) applications. To provide a switching operation at 60 GHz, an output network with distributed elements is used instead of lumped elements. The simulation results show a saturated output power of 15 dBm with a peak PAE of 26% at 60 GHz. It achieves a gain of 15dB at 60 GHz.
Keywords :
CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; personal area networks; PAE; WPAN application; class E power stage; class F driver stage; distributed element; efficiency 26 percent; frequency 60 GHz; gain 15 dB; lumped element; size 65 nm; two-stage CMOS class F-E power amplifier; wireless personal area network; Abstracts; Barium; Indexes; Power amplifiers; Simulation; 60 GHz; Class E power amplifier; Class F power amplifier; millimeter wave power amplifier;
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2012 25th Symposium on
Conference_Location :
Brasilia
Print_ISBN :
978-1-4673-2606-3
DOI :
10.1109/SBCCI.2012.6344451
