DocumentCode
2036579
Title
An RF CMOS modified-cascode LNA with inductive source degeneration
Author
Fouad, Hajiz ; Sharaf, K. ; El-Diwany, Essam ; El-Hennaway, H.
Author_Institution
Electron. Res. Inst., Cairo, Egypt
fYear
2002
fDate
2002
Firstpage
450
Lastpage
457
Abstract
An RF CMOS low-noise amplifier (LNA) is proposed using modified-cascode topology to reduce the voltage supply and consequently the power dissipation. The circuit was simulated and designed for 0.5 μm CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 1.62 dB, forward gain is 18.6 dB and reverse isolation is -45.5 dB. The LNA consumes 12.5 mW from a 1 V power supply.
Keywords
CMOS analogue integrated circuits; SPICE; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit modelling; monolithic integrated circuits; network analysis; network topology; semiconductor device models; 0.5 micron; 1 GHz; 1 V; 12.5 mW; CMOS LNA; CMOS low-noise amplifier; MOSIS process; RF LNA; RF low-noise amplifier; SPICE; circuit analysis; forward gain; inductive source degeneration; modified-cascode topology; monolithic RFIC; noise figure; reverse isolation; CMOS process; Circuit simulation; Circuit topology; Gain; Low-noise amplifiers; Noise figure; Noise measurement; Power dissipation; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 2002. (NRSC 2002). Proceedings of the Nineteenth National
Print_ISBN
977-5031-72-9
Type
conf
DOI
10.1109/NRSC.2002.1022654
Filename
1022654
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