Comparison of the electrical properties for etched and as-deposited BLT thin films

Author

Kyu-Tae Lim ; Kyoung-Tae Kim ; Dong-Pyo Kim ; Chang-Il Kim

Author_Institution

Sch. of Electr. & Electron. Eng., Chungang Univ., Seoul, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

403

Abstract

Summary form only given, as follows. In recent years, some Bi-layered perovskite oxide such as SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) and Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ (BLT) have been intensively studied for use in FRAMs because of its low leakage current, low coercive field, and fatigue-free with simple Pt electrode. The fatigue-free behavior of SBT and BLT thin film was due to the charge compensating effect of Bi/sub 2/O/sub 2/ layers resulting in the reduction of space charge and from domain wall unpinning that happens at least as rapidly as domain pinning.

Keywords

bismuth compounds; charge compensation; electric domain walls; ferroelectric storage; ferroelectric thin films; lanthanum compounds; leakage currents; random-access storage; space charge; sputter etching; strontium compounds; Bi-layered perovskite oxide; Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/; FRAM; SrBi/sub 2/Ta/sub 2/O/sub 9/; charge compensating effect; coercive field; domain wall unpinning; electrical properties; etched thin films; fatigue-free behavior; leakage current; space charge; Argon; Dry etching; Electrons; Plasma applications; Plasma density; Plasma sources; Plasma temperature; Sputter etching; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1229948

Filename

1229948