DocumentCode
2036599
Title
Plasma diagnosis and end-point detection with an optical emission spectroscopy during high density inductively coupled BCl/sub 3/ plasma etching
Author
Cho, G.S. ; Lee, Jae W. ; Lim, W.T. ; Baek, I.G. ; Cho, K.S. ; Pearton, S.J.
Author_Institution
Inst. of Nano-Technol., Inje Univ., Kyungnahm, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
404
Abstract
Summary form only given, as follows. Plasma diagnosis and end-point detection technology with optical emission spectroscopy is getting attention for precise control of dry etching process. Especially, optical emission spectroscopy can be a very useful tool for monitoring of dry etching of compound semiconductors. OES technology does not interfere plasma processing during monitoring.
Keywords
atomic emission spectroscopy; boron compounds; plasma chemistry; plasma diagnostics; sputter etching; BCl/sub 3/; OES technology; dry etching; end-point detection; high density inductively coupled plasma etching; optical emission spectroscopy; plasma diagnosis; Dry etching; Monitoring; Optical coupling; Optical detectors; Plasma applications; Plasma density; Plasma diagnostics; Plasma materials processing; Spectroscopy; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1229949
Filename
1229949
Link To Document