Title :
High frequency noise simulations of MOSFET´s short channel effects using PSpice
Author :
Fouad, H. ; El-Diwany, Essam ; Sharaf, K. ; El-Hennawy, Hadia
Author_Institution :
Electron. Res. Inst., Cairo, Egypt
Abstract :
A simulation of MOSFET´s noise due to short channel effects (SCE) is proposed using the PSpice simulator to estimate a realistic noise figure of a low noise amplifier (LNA) at RF. The noise of a submicron MOSFET has been simulated using real resistors and shown to be greater than the noise expected from long-channel MOSFETs which are considered in PSpice. The LNA circuits were designed and simulated with a 0.5 μm CMOS MOSIS process. At 1 GHz, the simulations and calculations agree well.
Keywords :
CMOS analogue integrated circuits; SPICE; UHF amplifiers; UHF integrated circuits; circuit simulation; equivalent circuits; semiconductor device models; semiconductor device noise; thermal noise; 0.5 micron; 1 GHz; CMOS MOSIS process; MOSFET IC; PSpice; RF LNA; RFIC; equivalent circuit; high frequency noise simulations; low noise amplifier; noise figure; short channel effects; thermal noise; Active noise reduction; Circuit noise; Circuit simulation; Frequency; MOSFET circuits; Noise figure; Resistors; SPICE; Topology; Voltage;
Conference_Titel :
Radio Science Conference, 2002. (NRSC 2002). Proceedings of the Nineteenth National
Print_ISBN :
977-5031-72-9
DOI :
10.1109/NRSC.2002.1022655
