Title :
A comparison of CMOS and BJT RF-LNAs
Author :
Fouad, H. ; Sharaf, Khuled ; El-Diwany, Essum ; El-Hennawy, Hadia
Author_Institution :
Electron. Res. Inst., Cairo, Egypt
Abstract :
A simulation comparison of MOSFETs low noise amplifier (LNA) versus BJT LNA is proposed using a Pspice simulator. The MOSFET LNA was simulated and designed with a 0.5 μm CMOS MOSIS process. It was concluded that the use of low-cost and high integration CMOS technology results in a penalty in the power dissipation and frequency response which are much better in bipolar technology. The comparison is performed at an operating frequency of 1.0 GHz.
Keywords :
CMOS integrated circuits; SPICE; UHF amplifiers; bipolar integrated circuits; circuit simulation; frequency response; semiconductor technology; 0.5 micron; 1.0 GHz; BJT LNA; BJT RF-LNA; CMOS MOSIS process; CMOS RF-LNA; MOSFET low noise amplifier; Pspice simulator; bipolar technology; frequency response; high integration CMOS technology; low-cost a CMOS technology; power dissipation; simulation comparison; CMOS digital integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Cost function; Gallium arsenide; Integrated circuit technology; MOSFETs; Radio frequency; Transceivers;
Conference_Titel :
Radio Science Conference, 2002. (NRSC 2002). Proceedings of the Nineteenth National
Print_ISBN :
977-5031-72-9
DOI :
10.1109/NRSC.2002.1022658
