a-C:F:H film with low k and high thermal stability deposited by electron cyclotron resonance chemical vapor deposition at room temperature

Summary form only given, as follows. a-C:F:H films, being used as a potential interlayer dielectrics, have recently received much attentions due to low dielectric constant (low k) and high thermal stability. Generally, an appropriate fluorine content in the film can effectively lower the dielectric constant, but excessive fluorine content in the film may always constrain C-C cross-linked structure, which causes a decrease in thermal stability for a-C:F:H films. Therefore, only by adjusting process parameters carefully in the film deposition can a tradeoff between low k and thermal stability be obtained. In this paper, a-C.F H films were prepared with mixture of C/sub 6/H/sub 6/ and CHF/sub 3/ gases by microwave electron cyclotron resonance (ECR) chemical vapor deposition (CVD) method.