Title :
Electrical stability of the a-C:F film with low-k dielectric constant deposited by ICPCVD method
Author :
Ko, H.J. ; Choi, C.K.
Author_Institution :
Dept. of Phys., Cheju Nat. Univ., South Korea
Abstract :
Summary form only given, as follows. Electrical stability of the film for ultra-large scale integrated circuit (ULSI) multilevel interconnections is studied.
Keywords :
ULSI; amorphous semiconductors; carbon; elemental semiconductors; fluorine; integrated circuit interconnections; permittivity; plasma CVD coatings; C:F; ICPCVD method; ULSI multilevel interconnections; a-C:F film; electrical stability; low-k dielectric constant; ultralarge scale integrated circuit; Bonding; Circuit stability; Coupling circuits; Dielectric constant; Dielectric substrates; Gases; Integrated circuit interconnections; Physics; Plasma chemistry; Ultra large scale integration;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229958
