Title :
Hybrid formation of TiCN using ion beam sputtering and annealing methods
Author :
Concepcion, P.C. ; Ramos, H.J.
Author_Institution :
Intel Technol. Philippines, Cavite City, Philippines
Abstract :
Summary form only given, as follows. Summary form only given. Titanium carbonitride has been formed in the temperature range of 400-1000/spl deg/C by annealing layers of Ti and C deposited on an AISI 316 stainless steel substrate in an ammonia atmosphere. Phase interdiffusion and film composition were characterized with the aid of Auger depth profiling, focused ion beam exposure, energy dispersive X-ray analysis elemental dot mapping and X-ray diffraction. The morphology of the films was determined by scanning electron microscopy. The influence of annealing temperature, time and Ti/C bilayer on the hardness of the film was investigated. Based on Vickers hardness results a 40% increase in the hardness of the material was exhibited as the annealing temperature was increased from 400-800/spl deg/C at constant gas flow rate. As the ammonia ambient pressure was varied a subsequent increase in the hardness was also observed at constant temperature.
Keywords :
Auger electron spectra; Vickers hardness; X-ray chemical analysis; X-ray diffraction; annealing; chemical interdiffusion; focused ion beam technology; scanning electron microscopy; sputter deposition; titanium compounds; 400 to 1000 C; AISI 316 stainless steel substrate; Auger depth profiling; NH/sub 3/; Ti-C; Ti/C bilayer; TiCN; Vickers hardness; X-ray diffraction; ammonia ambient pressure; ammonia atmosphere; annealing; annealing temperature; annealing time; constant gas flow rate; energy dispersive X-ray analysis elemental dot mapping; film composition; film morphology; focused ion beam exposure; hybrid formation; ion beam sputtering; phase interdiffusion; scanning electron microscopy; Annealing; Atmosphere; Dispersion; Ion beams; Sputtering; Steel; Substrates; Temperature distribution; Titanium; X-ray diffraction;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229975
