Lumped-element modeling of millimeter-wave HEMT parasitics via full-wave electromagnetic analysis

We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, and the computed response of the proposed model up to 325 GHz. For the first time, we develop a systematic parameter extraction algorithm for differential device configurations.