DocumentCode
2037570
Title
Electrical characteristics of the dual frequency capacitively coupled plasma (CCP)
Author
Jeon, B.I. ; Chang, H.Y.
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
423
Abstract
Summary form only given, as follows. The electrical characteristics of the dual frequency capacitively coupled plasma (CCP) was measured. Applied RF power was deposited by ions when we use low frequency and an applied RF power was deposited by electrons when we use high frequency. This means that low frequency enhances the ion acceleration energy to the electrode and high frequency enhances the plasma density. We could control these two power dissipation mechanisms by using dual frequency (high frequency + low frequency).
Keywords
high-frequency discharges; dual frequency capacitively coupled plasma; high frequency; low frequency; Acceleration; Electric variables; Electric variables measurement; Electrons; Frequency measurement; Plasma accelerators; Plasma density; Plasma measurements; Plasma properties; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1229986
Filename
1229986
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