• DocumentCode
    2037570
  • Title

    Electrical characteristics of the dual frequency capacitively coupled plasma (CCP)

  • Author

    Jeon, B.I. ; Chang, H.Y.

  • Author_Institution
    Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • fYear
    2003
  • fDate
    5-5 June 2003
  • Firstpage
    423
  • Abstract
    Summary form only given, as follows. The electrical characteristics of the dual frequency capacitively coupled plasma (CCP) was measured. Applied RF power was deposited by ions when we use low frequency and an applied RF power was deposited by electrons when we use high frequency. This means that low frequency enhances the ion acceleration energy to the electrode and high frequency enhances the plasma density. We could control these two power dissipation mechanisms by using dual frequency (high frequency + low frequency).
  • Keywords
    high-frequency discharges; dual frequency capacitively coupled plasma; high frequency; low frequency; Acceleration; Electric variables; Electric variables measurement; Electrons; Frequency measurement; Plasma accelerators; Plasma density; Plasma measurements; Plasma properties; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
  • Conference_Location
    Jeju, South Korea
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-7911-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2003.1229986
  • Filename
    1229986