DocumentCode
2037730
Title
An integrated CMOS high power amplifier using power combining technique
Author
Wang, Yiheng ; Yuan, Jiann-Shiun
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
2012
fDate
15-18 March 2012
Firstpage
1
Lastpage
6
Abstract
A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1:1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 μm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.
Keywords
CMOS analogue integrated circuits; field effect MMIC; microwave power amplifiers; power combiners; built-in power combiner; frequency 5.2 GHz; fully integrated power amplifier; integrated CMOS high power amplifier; size 0.18 mum; transformer type power combiner; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Layout; Power amplifiers; Power combiners; Power generation; Simulation; CMOS; Power amplifier (PA); power combiner; transformer;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon, 2012 Proceedings of IEEE
Conference_Location
Orlando, FL
ISSN
1091-0050
Print_ISBN
978-1-4673-1374-2
Type
conf
DOI
10.1109/SECon.2012.6196999
Filename
6196999
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