The characteristics of dielectric properties of SiOC film with the variation of bonding angle on the Si-O-C structure

Author

Chang Sil Yang ; Young Hun Yu ; Chi Kyu Choi

Author_Institution

Dept. of Phys., Cheju Nat. Univ., Jeju, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

427

Abstract

Summary form only given, as follows. Carbon doped silicon oxide (SiOC) with low dielectric films were deposited on a p-type Si(100) substrate using a mixture gases of bis-trimethysilymethane (BTMSM) and oxygen gas by an inductively coupled plasma chemical vapor deposition. The Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy spectra used to investigate the porosity and the atomic concentration in the film.

Keywords

Fourier transform spectra; X-ray photoelectron spectra; bond angles; dielectric thin films; infrared spectra; plasma CVD coatings; porosity; silicon compounds; Fourier transform infrared spectroscopy; Si; SiOC; X-ray photoelectron spectroscopy; bonding angle; dielectric properties; inductively coupled plasma chemical vapor deposition; low dielectric films; p-type Si(100) substrate; porosity; Bonding; Chemical vapor deposition; Dielectric films; Dielectric substrates; Fourier transforms; Gases; Plasma chemistry; Plasma properties; Plasma x-ray sources; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1229994

Filename

1229994