Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs

Author

Hwang, Su Hwan ; Shin, Jae Cheol ; Choi, W.J. ; Park, Y.M. ; Song, J.D. ; Park, Young June ; Han, I.K. ; Cho, W.J. ; Lee, J.I. ; Han, Hu

Author_Institution

Nan Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

428

Abstract

Summary form only given, as follows. Summary form only given. Detection wavelength tuning of a quantum well infrared photodetector (QWIP) has been carried out by using the dielectric cap quantum well intermixing technique with plasma enhanced chemical vapor deposited SiO/sub 2/ capping layer.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; dielectric thin films; gallium arsenide; heat treatment; infrared detectors; plasma CVD coatings; quantum well devices; silicon compounds; AlGaAs-GaAs; AlGaAs/GaAs; QWIP; SiO/sub 2/; detection wavelength tuning; dielectric cap quantum well intermixing technique; infrared-photodetector; plasma enhanced chemical vapor deposited SiO/sub 2/ capping layer; quantum well infrared photodetector; thermal treatment; Electric resistance; Gallium arsenide; Infrared detectors; Nitrogen; Palladium; Plasma density; Plasma waves; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1229996

Filename

1229996