DocumentCode
2038753
Title
Ramping particle current power supply
Author
Liu, Chen-Yao ; Hsieh, Yao-Ching ; Moo, Chin-Sien
Author_Institution
Light Source Dept., Nat. Synchrotron Radiat. Res. Center, Hsinchu, Taiwan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
1802
Lastpage
1805
Abstract
Ramping power supplies for booster synchrotrons have to provide high quality current with well-defined waveforms for the sake of enhancing the injection particle current performance. A new ramping power supply which employs IGBT modules operating at higher switching frequency than the old GTO-based system is constructed at NSRRC. By this revamping, not only the produced total harmonic distortion of the current waveform can be improved; the injection and extraction efficiency of the booster ring can also be elevated. The measured dynamic range of the 10Hz sine wave current output of the new ramping power supply is better than 75dB and total harmonic distortion (THD) is less than 0.015%.
Keywords
harmonic distortion; insulated gate bipolar transistors; power supplies to apparatus; synchrotrons; IGBT modules; booster synchrotrons; extraction efficiency; injection particle current performance; ramping particle current power supply; total harmonic distortion; IGBT; booster synchrotron; particle current;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5686066
Filename
5686066
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