• DocumentCode
    2038753
  • Title

    Ramping particle current power supply

  • Author

    Liu, Chen-Yao ; Hsieh, Yao-Ching ; Moo, Chin-Sien

  • Author_Institution
    Light Source Dept., Nat. Synchrotron Radiat. Res. Center, Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    21-24 Nov. 2010
  • Firstpage
    1802
  • Lastpage
    1805
  • Abstract
    Ramping power supplies for booster synchrotrons have to provide high quality current with well-defined waveforms for the sake of enhancing the injection particle current performance. A new ramping power supply which employs IGBT modules operating at higher switching frequency than the old GTO-based system is constructed at NSRRC. By this revamping, not only the produced total harmonic distortion of the current waveform can be improved; the injection and extraction efficiency of the booster ring can also be elevated. The measured dynamic range of the 10Hz sine wave current output of the new ramping power supply is better than 75dB and total harmonic distortion (THD) is less than 0.015%.
  • Keywords
    harmonic distortion; insulated gate bipolar transistors; power supplies to apparatus; synchrotrons; IGBT modules; booster synchrotrons; extraction efficiency; injection particle current performance; ramping particle current power supply; total harmonic distortion; IGBT; booster synchrotron; particle current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2010 - 2010 IEEE Region 10 Conference
  • Conference_Location
    Fukuoka
  • ISSN
    pending
  • Print_ISBN
    978-1-4244-6889-8
  • Type

    conf

  • DOI
    10.1109/TENCON.2010.5686066
  • Filename
    5686066