DocumentCode :
2038753
Title :
Ramping particle current power supply
Author :
Liu, Chen-Yao ; Hsieh, Yao-Ching ; Moo, Chin-Sien
Author_Institution :
Light Source Dept., Nat. Synchrotron Radiat. Res. Center, Hsinchu, Taiwan
fYear :
2010
fDate :
21-24 Nov. 2010
Firstpage :
1802
Lastpage :
1805
Abstract :
Ramping power supplies for booster synchrotrons have to provide high quality current with well-defined waveforms for the sake of enhancing the injection particle current performance. A new ramping power supply which employs IGBT modules operating at higher switching frequency than the old GTO-based system is constructed at NSRRC. By this revamping, not only the produced total harmonic distortion of the current waveform can be improved; the injection and extraction efficiency of the booster ring can also be elevated. The measured dynamic range of the 10Hz sine wave current output of the new ramping power supply is better than 75dB and total harmonic distortion (THD) is less than 0.015%.
Keywords :
harmonic distortion; insulated gate bipolar transistors; power supplies to apparatus; synchrotrons; IGBT modules; booster synchrotrons; extraction efficiency; injection particle current performance; ramping particle current power supply; total harmonic distortion; IGBT; booster synchrotron; particle current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
ISSN :
pending
Print_ISBN :
978-1-4244-6889-8
Type :
conf
DOI :
10.1109/TENCON.2010.5686066
Filename :
5686066
Link To Document :
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