Computer-aided design on the VLSI 45/spl deg/-mask compaction

We combine 1D compaction with reshaping-a new action to improve the result of the compaction. Our algorithms change layout element shapes automatically according to some criteria and make neighboring layout element shapes as similar as possible. The more similar they are, the more compactable space we can obtain. The main part of our compaction is reshaping. If elements of a certain 45/spl deg/ layout can have their geometric shapes reassigned, we reshape them in order to gain a more compactable space. Some experimental results of this 45/spl deg/ compactor with and without reshaping of both Manhattan and nonManhattan 45/spl deg/ layouts are shown.<>