• DocumentCode
    2039031
  • Title

    A low voltage high output impedance bulk driven regulated cascode current mirror

  • Author

    Lakkamraju, Naresh ; Mal, Ashis Kumar

  • Author_Institution
    Dept. of ECE, Nat. Inst. of Technol., Durgapur, India
  • Volume
    3
  • fYear
    2011
  • fDate
    8-10 April 2011
  • Firstpage
    79
  • Lastpage
    83
  • Abstract
    This work proposes the design of a new low voltage high output impedance CMOS current mirror that offers enhanced output voltage compliance using bulk-driven technique. The input/output characteristics of the proposed current mirror are discussed. Designed circuit is simulated in a proprietary 180 nm CMOS process, using Cadence Spectre and BSIM3v3 models. Simulated results with 0.8 V power supply and 50 uA input current reveal that the proposed implementation requires a minimum input and output voltages of 0.4 V and 0.39 V respectively. It yields an increase of the output impedance compared with that of existing bulk driven current mirrors, thus offering a potential solution to mitigate the effect of ultra-deep submicron CMOS transistors used in sub 1-V current mirrors and current sources. Compared to high output impedance gate driven regulated cascode current mirror (GDRCCM), low voltage high output impedance body driven regulated cascode current mirror (BDRCCM) supports higher output voltage swing. Thus, the proposed design finds wide acceptability in low voltage and low power CMOS analog integrated circuits.
  • Keywords
    CMOS analogue integrated circuits; constant current sources; current mirrors; field effect transistors; low-power electronics; BDRCCM; BSIM3v3 model; GDRCCM; bulk-driven technique; cadence spectre model; current 50 muA; current source; high output impedance gate driven regulated cascode current mirror; low power CMOS analog integrated circuit; low voltage high output impedance CMOS current mirror; low voltage high output impedance body driven regulated cascode current mirror; size 180 nm; ultradeep submicron CMOS transistor; voltage 0.39 V; voltage 0.4 V; voltage 0.8 V; CMOS integrated circuits; Impedance; Logic gates; Low voltage; Mirrors; Power supplies; Transistors; Body Driven Technique; CMOS; Current Mirror; Low Power; Low Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Computer Technology (ICECT), 2011 3rd International Conference on
  • Conference_Location
    Kanyakumari
  • Print_ISBN
    978-1-4244-8678-6
  • Electronic_ISBN
    978-1-4244-8679-3
  • Type

    conf

  • DOI
    10.1109/ICECTECH.2011.5941805
  • Filename
    5941805