DocumentCode :
2039385
Title :
Using Die to chip carrier wire bond transition to build a 4th order differential LP filter for 10 Gpbs O/E receiver
Author :
Cubillo, J.R. ; Gaubert, J. ; Bourdel, S.
Author_Institution :
Dept. Micro-Electron. et Telecommun. Technopole de Chateau Gombert, IM2NP, Marseille
fYear :
2008
fDate :
12-15 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
We present in this paper a simple way to integrate a 4th order low pass filter (LPF) Bessel Thompson function with the help of the Die´s wirebond attaches from a trans-impedance amplifier (TIA) Die in an opto-electrical receiver (O/E Rx). Additional RF distributed microstripline elements on the O/E Rx chip carrier substrate will complete the LPF topology. This way the die to chip carrier transition is fully embedded in the LPF structure, and eliminates the needs of an additional die and wirebond attaches for the LPF function.
Keywords :
Bessel functions; lead bonding; low-pass filters; microstrip lines; receivers; Bessel Thompson function; RF distributed microstripline elements; chip carrier transition; die to chip carrier; differential low pass filter; opto-electrical receiver; transimpedance amplifier; wire bond transition; Bit error rate; Bonding; Capacitance; Crosstalk; Filters; Noise shaping; Optical noise; Packaging; SONET; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Propagation on Interconnects, 2008. SPI 2008. 12th IEEE Workshop on
Conference_Location :
Avignon
Print_ISBN :
978-1-4244-2317-0
Electronic_ISBN :
978-1-4244-2318-7
Type :
conf
DOI :
10.1109/SPI.2008.4558345
Filename :
4558345
Link To Document :
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