Effect of Multilayered Substrate on the Barnes-Hut Center-Of-Charge Clustering Approximation: Half-Space Case Study

Author

Jeffrey, Ian ; Okhmatovski, Vladimir

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Manitoba, Winnipeg, MB

fYear

2008

fDate

12-15 May 2008

Firstpage

1

Lastpage

4

Abstract

The Barnes-Hut algorithm has been shown to be an effective technique for reduction of the computational complexity and memory requirements in the capacitance extraction problem for general three-dimensional interconnects. In this paper we discuss the effect of the layered substrate on the Barnes-Hut clustering approximation using the half-space example. The modified formula for center-of-charge location in half-space is derived and validated.

Keywords

capacitance; computational complexity; integrated circuit interconnections; multilayers; substrates; 3D interconnects; Barnes-Hut algorithm; Barnes-Hut clustering approximation; capacitance extraction; center-of-charge location; computational complexity; half-space; memory requirements; multilayered substrate; Acceleration; Approximation algorithms; Capacitance; Clustering algorithms; Computational complexity; Dielectric substrates; Electrostatics; Embedded computing; Integral equations; Permittivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation on Interconnects, 2008. SPI 2008. 12th IEEE Workshop on

Conference_Location

Avignon

Print_ISBN

978-1-4244-2317-0

Electronic_ISBN

978-1-4244-2318-7

Type

conf

DOI

10.1109/SPI.2008.4558353

Filename

4558353