Atom Probe Characterization of Magnetic and Semiconductor Device Structures

Author

Larson, D.J. ; Thompson, K.

Author_Institution

Imago Sci. Instrum. Corp., Madison, WI

fYear

2006

fDate

38899

Firstpage

3

Lastpage

4

Abstract

The application of atom probe analysis to a variety of material systems in semiconductor and magnetic recording industries is discussed. Discussion includes SiGe layered structures, transistor-based structures,magnetoresistive spin valves, tunnel junctions, current-confined path spin valve structures and perpendicular recording media

Keywords

Ge-Si alloys; atom probe field ion microscopy; electronics industry; magnetic heads; magnetic tunnelling; perpendicular magnetic recording; semiconductor junctions; semiconductor materials; spin valves; tunnel transistors; SiGe; SiGe layered structures; atom probe analysis; current confined path spin valves; magnetic devices; magnetic recording; magnetostrictive spin valves; perpendicular recording media; semiconductor device structures; transistors; tunnel junctions; Atomic layer deposition; Magnetic analysis; Magnetic devices; Magnetic materials; Magnetic semiconductors; Perpendicular magnetic recording; Probes; Semiconductor devices; Semiconductor materials; Spin valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335305

Filename

4134430