Title :
Nanodiamond Lateral Field Emission Devices: Fabrication, Emission Current Scaling, Temperature- and Radiation-Tolerance
Author :
Kang, W.P. ; Subramanian, K. ; Davidson, J.L. ; Choi, B.K. ; Howell, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
A field emission device in lateral configuration is a favourable construct for electron emission due to versatility for electrode geometry design, precise control of anode-cathode spacing, and low capacitance. The development of micropatterning nanodiamond (ND) films using reactive ion etching has been critical to the utilization of ND as an electron emitter. We have fabricated lateral devices with high aspect ratio, finger-like ND emitters with sharp apexes and investigated how the number of emitters scales with respect to the forward emission current derived from the ND lateral device. We also report total dose (15 Mrad(SiO2)) and high temperature (>200degC) tests on these devices. No measurable change in the device performance is observed under adverse operating conditions
Keywords :
cathodes; diamond; electron field emission; nanoelectronics; nanostructured materials; sputter etching; thin films; C; anode-cathode spacing; aspect ratio; capacitance; electrode geometry design; electron emission; electron emitter; emission current scaling; micropatterning nanodiamond films; nanodiamond lateral field emission devices; radiation-tolerance; reactive ion etching; temperature-tolerance; Capacitance; Electrodes; Electron emission; Electron guns; Etching; Fabrication; Geometry; Nanoscale devices; Neodymium; Temperature;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335323
