Field Emission from Vertically Aligned Silicon Nanowires

Author

She, J.C. ; Yao, R.H. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S.

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou

fYear

2006

fDate

38899

Firstpage

51

Lastpage

52

Abstract

Au-Ag nanoparticles are used as nanomasks for Si nanowires fabrication. Au-Ag alloy film deposited on Si substrate is annealed in H ₂ ambient at a temperature of 750degC. The SiNWs were fabricated through a dry etching processing in an inductively coupled plasma (ICP) system. SEM images of the uniform vertically aligned silicon nanowire arrays show 50 to 100 nm nanowire diameter range and ~1.1 mum height. Field emission characteristics were tested in an ultra-high vacuum system. The electron emission turn-on field (E_to) and threshold field (E_th) were obtained from current-electric field characteristic plot

Keywords

annealing; electron field emission; elemental semiconductors; etching; nanotechnology; nanowires; plasma materials processing; scanning electron microscopy; semiconductor quantum wires; silicon; 50 to 100 nm; 75 degC; ICP; SEM; Si; current-electric field characteristic plot; dry etching; electron emission turn-on field; field emission; field emission characteristics; inductively coupled plasma system; nanomasks; nanowire diameter; nanowire fabrication; scanning electron micrography; thermal annealing; threshold field; ultra-high vacuum system; vertically aligned silicon nanowire arrays; Annealing; Dry etching; Fabrication; Nanoparticles; Nanowires; Plasma applications; Plasma temperature; Semiconductor films; Silicon alloys; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335347

Filename

4134454