Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells

Author

Abe, T. ; Yamada, H. ; Itano, N. ; Kasada, H. ; Ando, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Tottori Univ., Japan

fYear

2000

fDate

2000

Firstpage

57

Lastpage

60

Abstract

We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50Å)-ZnMgSSe(30Å)-ZnSe(20Å) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i-n structure ACQW modulator grown by molecular beam epitaxy (MBE). The present device exhibits a low reverse bias operation (∼8 V) with modulation ratio(T_on/T_off) of 1.08 at room temperature.

Keywords

II-VI semiconductors; effective mass; electro-optical modulation; magnesium compounds; molecular beam epitaxial growth; quantum confined Stark effect; quantum well devices; wide band gap semiconductors; zinc compounds; ZnSe-ZnMgSSe; ZnSe/ZnMgSSe asymmetric coupled quantum well; effective mass approximation; molecular beam epitaxy; p-i-n structure; quantum confined Stark effect; widegap II-VI compound short wavelength optical modulator; Molecular beam epitaxial growth; Optical coupling; Optical devices; Optical modulation; PIN photodiodes; Quantum well devices; Stark effect; Stationary state; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022890

Filename

1022890