TFT Technologies and Its Application to FED

Author

Jang, Jin

Author_Institution

Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul

fYear

2006

fDate

38899

Firstpage

95

Lastpage

95

Abstract

The TFT technologies with amorphous silicon, polycrystalline silicon and organic semiconductor will be presented together with the current issues for display applications. Active-matrix technologies are being used for manufacturing of TFT-LCD and TFT-OLED because of their advantages in realizing high performance displays. The advantages and disadvantages of active-matrix technologies for FED were discussed and a prototype AMFED using a high temperature processed amorphous silicon TFT on glass was presented

Keywords

elemental semiconductors; field emission displays; organic semiconductors; silicon; thin film transistors; Si; TFT technologies; TFT-LCD; TFT-OLED; active-matrix technologies; field emission device; high temperature processed amorphous silicon; Active matrix technology; Amorphous silicon; Displays; Glass; Organic semiconductors; Prototypes; Semiconductor device manufacture; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335374

Filename

4134476