Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching

Author

White, J.K. ; Antoszewski, J. ; Musca, C.A. ; Dell, J.M. ; Faraone, L. ; Burke, P.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

2000

fDate

2000

Firstpage

81

Lastpage

84

Abstract

Examination of the stability of reactive ion etching (RIE) induced n on p bulk junctions has been undertaken. Two possible type conversion mechanisms are proposed and their implications for bulk junction stability are discussed. Secondary ion mass spectrometry (SIMS) and electrical measurements have been performed before and after baking at 100°C, giving an insight into the junction formation mechanism and associated temperature stability.

Keywords

II-VI semiconductors; cadmium compounds; electrical resistivity; heat treatment; mercury compounds; p-n junctions; secondary ion mass spectra; sputter etching; thermal stability; 100 degC; HgCdTe; HgCdTe n-on-p junctions; RIE; SIMS; baking; bulk junction stability; dynamic resistance; electrical measurements; junction formation mechanism; reactive ion etching; secondary ion mass spectrometry; temperature stability; Deuterium; Diodes; Etching; Hydrogen; Mass spectroscopy; Passivation; Photodiodes; Stability; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022895

Filename

1022895