CMOS image sensor overlaid with a HARP photoconversion film

With the aim of creating a highly sensitive solid-state image sensor we developed a new CMOS image sensor that was made by overlaying a HARP (high-gain avalanche rushing amorphous photoconductor) photoconversion film on to the CMOS readout circuit. Prototype sensors were fabricated that used a new MOS transistor to increase breakdown voltage in the readout circuit. We developed connecting processes that were used to connect the HARP film to the readout circuit. Stable operation of the sensor was observed when the target voltage of 60 V was applied.