Nano-indentation characterisation of PECVD silicon nitride films

While finite element modelling (FEM) can be employed to optimise the displacement of the membrane structures to an applied electrostatic force, the accuracy of the results depend critically on the material properties of the membrane. Values for these properties can be obtained by evaluating the response of test structures such as cantilevers and beams to various loading conditions. We present in this paper an alternative approach, where measurement of Young´s modulus of thin PECVD silicon nitride films is achieved through nano-indentation of the film on a silicon substrate.