• DocumentCode
    2041193
  • Title

    Field Emission Properties of Pt Nanopillar Arrays Formed by Focused Ion Beams Induced Deposition

  • Author

    Jin, A.Z. ; Wang, Q. ; Li, Y.L. ; Yang, H.F. ; Li, J.J. ; Luo, Q. ; Cui, Z. ; Gu, C.Z.

  • Author_Institution
    Inst. of Phys., Chinese Acad. of Sci., Beijing
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    In this work, the nanofabrication of Pt nanopillar arrays with various geometries as field emitters was studied and their field emission properties were measured. Pt nanopillar arrays were fabricated on Si (100) substrate by FIB assisted chemical vapor deposition (CVD) method in a FEI DB235 dual-beam system, which is based on the principle of focusing an ion beam on the surface of a substrate in an organometallic precursor gas of C9H16Pt. For obtaining the nanopillar arrays with various densities and aspect ratios, some deposition parameters such as beam energy, beam current, beam dwelling time, angle between beam and substrate, pixel overlap ratio and the flow rate of organometallic gas, and so on were changed. By optimizing the process conditions, the formation of Pt nanopillar arrays with different densities from 0 to 1 times 108/cm 2, heights from 100 nm to 3mum, and tip radius from 80 to 150 nm were controlled
  • Keywords
    chemical vapour deposition; electron field emission; focused ion beam technology; ion-surface impact; nanostructured materials; nanotechnology; platinum; 80 to 150 nm; CVD; Pt; Pt nanopillar arrays; Si; Si (100) substrate; beam current; beam dwelling time; beam energy; chemical vapor deposition; field emission properties; field emitters; focused ion beams induced deposition; Electrodes; Electron emission; Fabrication; Focusing; Geometry; Ion beams; Mechanical factors; Physics; Scanning electron microscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
  • Conference_Location
    Guilin
  • Print_ISBN
    1-4244-0401-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2006.335391
  • Filename
    4134493