DocumentCode :
2041206
Title :
Low pressure MOCVD growth of GaSb using trisdimethylaminoantimony (TDMASb)
Author :
Sustini, E. ; Sugianto ; Sani, R.A. ; Latunuwe, A. ; Arifin, P. ; Barmawi, M.
Author_Institution :
Institute of Technology Bandung
fYear :
2000
fDate :
6-8 Dec. 2000
Firstpage :
121
Lastpage :
124
Keywords :
Crystallography; Fluid flow; Hydrogen; Inductors; MOCVD; Physics; Substrates; Surface morphology; Temperature distribution; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Conference_Location :
Bundoora, Victoria, Australia
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022906
Filename :
1022906
Link To Document :
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