Field Electron Emission from GaAs Nanowhiskers Fabricated by MBE

Author

Ptitsin, V.E. ; Cirlin, G.E. ; Dubrovskii, V.G. ; Evtikhiev, V.P. ; Evtikhiev, S.A. ; Amsonenko, Yu B. ; Tonkikh, A.A.

Author_Institution

Inst. for Anal. Instrum., Acad. of Sci., St. Petersburg

fYear

2006

fDate

38899

Firstpage

133

Lastpage

134

Abstract

This paper investigated the electron emission properties of self-assembled GaAs nanowhiskers (NWs) grown by MBE which includes electron emission current, potential difference dependences in the vacuum gap between the probe tip and GaAs NWs surface. The analysis shows that the electron emission from the NWs nanostructure surface is the result of electron tunneling from the indicated above surfaces into the probe material. The question of barrier shape still remains open. Possible influence of size effects for GaAs NWs was not revealed. The estimates of the emission current density have shown that the current density is very high and equal to about 10⁵ A/cm²

Keywords

III-V semiconductors; current density; electron field emission; gallium arsenide; nanostructured materials; semiconductor epitaxial layers; tunnelling; whiskers (crystal); GaAs; barrier shape; electron emission current; electron tunneling; emission current density; field electron emission; potential difference dependences; self-assembled GaAs nanowhiskers; size effects; Current density; Current measurement; Data analysis; Electron emission; Gallium arsenide; Instruments; Nanostructures; Scanning probe microscopy; Substrates; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335393

Filename

4134495