Title :
Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition
Author :
Afifuddin, A. ; Butcher, K.S.A. ; Chen, Patrick P.-T. ; Goldys, E.M. ; Tansley, T.L.
Author_Institution :
Phys. Dept., Macquarie Univ., Sydney, NSW, Australia
Abstract :
Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon. The influence of substrate temperature is discussed and growth mechanisms are explained. Properties of the GaN films are measured by X-ray diffraction and optical transmission spectroscopy.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; laser deposition; light transmission; plasma CVD; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 525 to 650 C; Al2O3; GaN; Si; X-ray diffraction; growth; growth mechanisms; microcrystalline films; microwave plasma assisted laser-induced chemical vapour deposition; optical transmission spectroscopy; sapphire; silicon; substrate temperature; Chemical lasers; Chemical vapor deposition; Gallium nitride; Masers; Optical films; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Semiconductor films;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022908
