DocumentCode
2041344
Title
Preparation and Characteristics of ZnO Nanowires Based on the Thermal Evaporation of Metal Zinc at Low Temperature1
Author
Yongning, He ; Songchang, Zhang ; Changchun, Zhu
Author_Institution
Dept. of Electron. Sci. & Technol., Xi´´an Jiaotong Univ.
fYear
2006
fDate
38899
Firstpage
141
Lastpage
142
Abstract
ZnO nanowires with high quality and high yield can be obtained based on the simple thermal evaporation of metal zinc in situ at low temperature, which are repeatable. It´s suggested that we can use the ZnO nanowires to develop nano-optoelectronics devices and sensors
Keywords
II-VI semiconductors; X-ray diffraction; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; vacuum deposition; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; in situ thermal evaporation; metal zinc; scanning electron microscopy; zinc oxide nanowires; Boats; Electron emission; Nanoscale devices; Nanowires; Optoelectronic devices; Oxidation; Silicon; Surface morphology; Temperature sensors; Zinc oxide; ZnO nanowire; low temperatur; thermal evaporation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335397
Filename
4134499
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