DocumentCode
2041347
Title
Ultrafast heterobarrier MSM-photodiode structures
Author
Averine, S.V. ; Chan, Y.C. ; Lam, Y.L. ; Bondarenko, O. ; Sachot, R.
Author_Institution
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
fYear
2000
fDate
2000
Firstpage
137
Lastpage
140
Abstract
The impulse response of a heterobarrier metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the use of a heterobarrier structure greatly enhances the response speed of InP/GaInAs MSM-detectors.
Keywords
III-V semiconductors; digital simulation; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photoconductivity; photodetectors; semiconductor device models; InP-GaInAs; InP/GaInAs; electric field distribution; impulse response speed; photogenerated carrier distribution; short laser pulse; ultrafast heterobarrier MSM-photodiode structure; Algorithm design and analysis; Boundary conditions; Charge carrier processes; Computational modeling; Diodes; Electrodes; Electron mobility; Electrostatics; Fingers; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022910
Filename
1022910
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