InGaAs/InGaAsP quantum well infrared photodetector array operating at 1.5 μm wavelength

Author

Li, Na ; Chan, Y.C. ; Ng, S.L. ; Ong, T.K. ; Lam, Y.L.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2000

fDate

2000

Firstpage

141

Lastpage

144

Abstract

An InGaAs/InGaAsP multiple quantum well (MQW) infrared photodetector array was fabricated on an InP substrate. This paper describes the fabrication and performance characteristics of four and seven pin photodiode element photodetector arrays suitable for 1.3-1.7 μm wavelength applications. The average responsivity achieved was 7mA/W at 150 nm when the bias voltage was -3V. The minimum dark current is 15 μA at -3V for a device area of 0.05mm².

Keywords

III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; semiconductor quantum wells; -3 V; 1.3 to 1.7 micron; 15 muA; 150 nm; InGaAs-InGaAsP; InGaAs/InGaAsP; InP; InP substrate; MQW IR photodetector array; QWIP array; array fabrication; array performance characteristics; bias voltage; device area; minimum dark current; multiple quantum well infrared photodetector array; pin photodiode element; responsivity; Dark current; Indium gallium arsenide; Indium phosphide; Infrared detectors; PIN photodiodes; Photodetectors; Photonics; Quantum well devices; Sensor arrays; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022911

Filename

1022911