Self-consistent C-V characterization of depletion mode buried channel InGaAs/InAs Quantum Well FET incorporating strain effects

Author

Ahmed, Ishtiaq ; Niaz, I.A. ; Alam, Md Hasibul ; Chowdhury, Nasirul ; Azim, Zubair Al ; Mohd Khosru, Quazi Deen

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Tech., Dhaka, Bangladesh

fYear

2012

fDate

5-6 Nov. 2012

Firstpage

75

Lastpage

79

Abstract

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; quantum well devices; InGaAs-InAs; QWFET structure; ballistic current; barrier layer; capacitance-voltage characteristics; depletion mode buried channel quantum well FET; electrostatic property; enhancement type device; gate dielectric; indium composition; indium content; inversion capacitance; oxide thickness; quantum mechanical effects; self-consistent C-V characterization; self-consistent method; strain effects; Buried Channel QWFET; Delta Doping; HEMT; High-k dielectric; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE International Conference on

Conference_Location

Kuala Lumpur

ISSN

2159-2047

Print_ISBN

978-1-4673-2162-4

Type

conf

DOI

10.1109/ICEDSA.2012.6507820

Filename

6507820