Title :
Self-consistent C-V characterization of depletion mode buried channel InGaAs/InAs Quantum Well FET incorporating strain effects
Author :
Ahmed, Ishtiaq ; Niaz, I.A. ; Alam, Md Hasibul ; Chowdhury, Nasirul ; Azim, Zubair Al ; Mohd Khosru, Quazi Deen
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Tech., Dhaka, Bangladesh
Abstract :
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; quantum well devices; InGaAs-InAs; QWFET structure; ballistic current; barrier layer; capacitance-voltage characteristics; depletion mode buried channel quantum well FET; electrostatic property; enhancement type device; gate dielectric; indium composition; indium content; inversion capacitance; oxide thickness; quantum mechanical effects; self-consistent C-V characterization; self-consistent method; strain effects; Buried Channel QWFET; Delta Doping; HEMT; High-k dielectric; Strain;
Conference_Titel :
Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2162-4
DOI :
10.1109/ICEDSA.2012.6507820
