Title :
High power, kink-free 970 nm InGaAs/AlGaAs laser diodes with asymmetric structure
Author :
Buda, M. ; Fu, L. ; Hay, J. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
High power (265 mW) kink free operation of 4 μm wide stripe devices is demonstrated for a 970 nm InGaAs/GaAs/AlGaAs asymmetric structure in CW conditions. The maximum of the optical field distribution is moved towards the n-side of the structure. The structure was designed to allow a higher value of the catastrophic optical damage of the mirror (COD). For devices having uncoated mirrors the COD level is 200 mW / facet. The kink free operation is limited by thermal waveguiding. The same devices operate kink free until 500 mA if operated in pulsed conditions: 1.75 μs pulse width / 36 μs between pulses.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; 265 mW; 500 mA; 970 nm; CW operation; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs laser diode; asymmetric structure; catastrophic optical damage; high-power kink-free operation; mirror; optical field distribution; pulsed operation; stripe device; thermal waveguiding; Absorption; Diode lasers; Gallium arsenide; Indium gallium arsenide; Optical pulses; Optical pumping; Optical waveguides; Power engineering and energy; Pulse amplifiers; Space vector pulse width modulation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022913
