DocumentCode :
2041523
Title :
High local scanning modification of semiconductors and dielectrics
Author :
Gordienko, Yu.E. ; Slipchenko, N.I. ; Poletaev, D.A. ; Prokaza, A.M. ; Pyataikina, M.I.
Author_Institution :
Kharkov Nat. Univ. of Radioelectron., Kharkov, Ukraine
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
726
Lastpage :
727
Abstract :
The present paper concerns the implementation principles for high local scanning UHF heating of semiconductors and dielectrics with the purpose of their modification in various microtechnologies, including microelectronic technologies. Numerical investigations of spatiotemporal temperature distribution in the object under near-field UHF high local probe with coaxial aperture have been carried out. Basic quantitative dependencies of the above distribution upon electrophysical parameters of semiconductor object and UHF probe structural element have been determined.
Keywords :
UHF measurement; dielectric materials; semiconductor materials; spatiotemporal phenomena; UHF probe structural element; coaxial aperture; dielectrics; electrophysical parameters; high local scanning UHF heating; high local scanning modification; microelectronic technologies; microtechnologies; near-field UHF high local probe; semiconductors; spatiotemporal temperature distribution; Dielectrics; Educational institutions; Electromagnetic heating; Microwave theory and techniques; Probes; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6653033
Link To Document :
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