High local scanning modification of semiconductors and dielectrics

Author

Gordienko, Yu.E. ; Slipchenko, N.I. ; Poletaev, D.A. ; Prokaza, A.M. ; Pyataikina, M.I.

Author_Institution

Kharkov Nat. Univ. of Radioelectron., Kharkov, Ukraine

fYear

2013

fDate

8-14 Sept. 2013

Firstpage

726

Lastpage

727

Abstract

The present paper concerns the implementation principles for high local scanning UHF heating of semiconductors and dielectrics with the purpose of their modification in various microtechnologies, including microelectronic technologies. Numerical investigations of spatiotemporal temperature distribution in the object under near-field UHF high local probe with coaxial aperture have been carried out. Basic quantitative dependencies of the above distribution upon electrophysical parameters of semiconductor object and UHF probe structural element have been determined.

Keywords

UHF measurement; dielectric materials; semiconductor materials; spatiotemporal phenomena; UHF probe structural element; coaxial aperture; dielectrics; electrophysical parameters; high local scanning UHF heating; high local scanning modification; microelectronic technologies; microtechnologies; near-field UHF high local probe; semiconductors; spatiotemporal temperature distribution; Dielectrics; Educational institutions; Electromagnetic heating; Microwave theory and techniques; Probes; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-395-1

Type

conf

Filename

6653033