Title :
Application prospects for aluminum bases in gigahertz devices
Author :
Sokol, V.A. ; Yakovtseva, V.A. ; Parkun, V.M.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Based on analysis of the microstrip line parameters, arguments for aluminum bases with a dielectric layer of anodic aluminum oxide for gigahertz devices are adduced. Taking into consideration that aluminum is a good structural material, it is concluded that aluminum bases are very promising for microelectronic microwave devices operating at high frequencies and powers.
Keywords :
aluminium compounds; integrated circuits; microwave devices; AlO2; aluminum bases; anodic aluminum oxide; dielectric layer; gigahertz devices; microelectronic microwave devices; microstrip line parameters; structural material; Aluminum; Dielectrics; Electronic mail; Microelectronics; Microstrip; Microwave FET integrated circuits; Microwave devices;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
