Title :
Field Emitter Array with a Memory Function for Ultra-High Luminance FED
Author :
Nagao, M. ; Yasumuro, C. ; Taniguchi, M. ; Itoh, S. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
Based on the thin film transistor (TFT)-controlled field emitter array (FEA) technology, the authors successfully fabricated an FEA with a memory function for an ultra-high brightness field emitter display (FED). If an additional TFT for discharge is inserted parallel with the capacitor, the light emitting period can be completely controlled. The brightness of FED can be dynamically controlled by changing light emitting period and pulse height of data line
Keywords :
brightness; capacitors; elemental semiconductors; field emitter arrays; semiconductor thin films; silicon; silicon compounds; thin film transistors; Si-SiO2; brightness; capacitor; field emitter array; field emitter display; light emitting period; memory function; memory-FEA; pulse height; thin film transistor; ultrahigh luminance FED; Capacitance; Capacitors; Data mining; Displays; Electrodes; Field emitter arrays; Leakage current; Optical arrays; Thin film transistors; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335407
